IPD22N08S2L-50 Infineon Technologies, IPD22N08S2L-50 Datasheet - Page 5

• Manufacturer Part Number: IPD22N08S2L-50
• Description: MOSFET N-CH 75V 27A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD22N08S2L-50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2V @ 31µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 630pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000252163

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
100
80
60
40
20
50
0
0
DS
GS
1
0
); T
); V
GS
j
j
DS
= 25 °C
= 6V
2
2
175 °C
10 V
4
V
V
GS
DS
25 °C
3
[V]
[V]
6
-55 °C
4
8
3.5 V
4 V
2.5 V
5 V
4.5 V
3 V
10
5
page 5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
40
30
20
10
170
150
130
110
0
90
70
50
30
= (I
D
0
); T
0
D
3 V
); T
j
= 25°C
fs
GS
j
= 25 °C
3.5 V
10
10
I
D
I
20
D
[A]
20
[A]
4 V
IPD22N08S2L-50
30
30
2006-07-18
5 V
4.5 V
10 V
40
40