NDD02N60Z-1G ON Semiconductor, NDD02N60Z-1G Datasheet - Page 4
![MOSFET N-CH 600V IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
NDD02N60Z-1G
Manufacturer Part Number
NDD02N60Z-1G
Description
MOSFET N-CH 600V IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NDF02N60ZG.pdf
(10 pages)
Specifications of NDD02N60Z-1G
Package / Case
IPak, TO-251 (2 straight leads + tab)
Mounting Type
Through Hole
Power - Max
57W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
10.1nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohms
Forward Transconductance Gfs (max / Min)
1.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1.4 A
Power Dissipation
57 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
10.1 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDD02N60Z-1G
Manufacturer:
ON
Quantity:
3 225
Company:
Part Number:
NDD02N60Z-1G
Manufacturer:
ON Semiconductor
Quantity:
15
Company:
Part Number:
NDD02N60Z-1G
Manufacturer:
ON
Quantity:
12 500
1000
0.10
100
1.0
1.0
10
10
1
0
Figure 10. Resistive Switching Time Variation
Figure 7. Drain−to−Source Leakage Current
V
V
50 100 150 200 250 300 350 400 450 500 550 600
DD
I
D
GS
= 2.4 A
V
= 300 V
= 10 V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
versus Voltage
T
T
J
J
= 150°C
= 125°C
15.0
14.0
13.0
12.0
10.0
11.0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
Drain−to−Source Voltage versus Total Charge
Q
1
GS
Figure 9. Gate−to−Source Voltage and
TYPICAL CHARACTERISTICS
2
Q
g
, TOTAL GATE CHARGE (nC)
V
3
t
t
t
t
d(off)
DS
r
d(on)
f
http://onsemi.com
4
100
Q
Q
5
GD
T
4
6
10.0
600
550
500
450
400
350
300
250
200
150
100
1.0
0.1
50
7
0
0.3
0
C
8
V
rss
V
Figure 11. Diode Forward Voltage versus
T
0.4
5
GS
I
DS
D
J
V
V
= 2.4 A
= 25°C
9
= 300 V
DS
SD
T
Figure 8. Capacitance Variation
10
J
0.5
, DRAIN−TO−SOURCE VOLTAGE (V)
, SOURCE−TO−DRAIN VOLTAGE (V)
C
= 150°C
10
oss
15
0.6
11
C
350
300
250
200
150
100
50
0
125°C
iss
20
Current
0.7
25
25°C
0.8
30
−55°C
0.9
35
1.0
V
T
f = 1 MHz
40
J
GS
= 25°C
= 0 V
1.1
45
50
1.2