NDD02N60Z-1G ON Semiconductor, NDD02N60Z-1G Datasheet - Page 10
![MOSFET N-CH 600V IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
NDD02N60Z-1G
Manufacturer Part Number
NDD02N60Z-1G
Description
MOSFET N-CH 600V IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NDF02N60ZG.pdf
(10 pages)
Specifications of NDD02N60Z-1G
Package / Case
IPak, TO-251 (2 straight leads + tab)
Mounting Type
Through Hole
Power - Max
57W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
10.1nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 1A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohms
Forward Transconductance Gfs (max / Min)
1.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1.4 A
Power Dissipation
57 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
10.1 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Price
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NDD02N60Z-1G
Manufacturer:
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NDF02N60Z/D