BSO613SPV G Infineon Technologies, BSO613SPV G Datasheet
BSO613SPV G
Specifications of BSO613SPV G
BSO613SPVGXT
SP000216309
Related parts for BSO613SPV G
BSO613SPV G Summary of contents
Page 1
... A Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.3 Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current Lead free Yes = 25 °C, unless otherwise specified Symbol puls jmax Page 1 BSO613SPV DS(on Top View SIS00062 Value -3.44 -13.8 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.3 Symbol sec. £ °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS = 25 ° 125 ° GSS R DS(on) Page 2 BSO613SPV G Values min. typ. max thJS thJA - - - - Values min. typ. max. - -0.1 - -10 -100 - -10 ...
Page 3
... - 2 Rise time Turn-off delay time Fall time Rev.1 °C, unless otherwise specified j Symbol -3. d(on) = -3. -3. d(off) = -3. -3. Page 3 BSO613SPV G Values min. typ. max. 2.2 4.4 - 700 iss - 235 oss - 95 rss - Unit - S 875 pF 295 120 2007-03-02 ...
Page 4
... A Inverse diode forward voltage -3. Reverse recovery time 100 A/µ Reverse recovery charge 100 A/µ Rev.1 °C, unless otherwise specified j Symbol - (plateau) Symbol Page 4 BSO613SPV G Values Unit min. typ. max. - 1.6 2 -3. Values Unit min. typ. max -3. -13.8 - -0.87 -1. 2007-03-02 ...
Page 5
... Rev.1.3 Drain current parameter: V -3.8 A -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 °C 100 120 160 T A Transient thermal impedance Z thJC parameter : K 550.0µ -10 - Page 5 BSO613SPV ³ GS BSO613SPV 100 120 = BSO613SPV single pulse - 2007-03-02 °C 160 0.50 0.20 ...
Page 6
... V -5.0 0 Typ. forward transconductance = parameter Page 6 BSO613SPV BSO613SPV [ -3.5 -3.7 -4.0 -4.2 -4.5 -4.7 -5.0 -5.5 -10.0 -1.0 -2.0 -3.0 -4.0 -5 =25° 2007-03- -7.0 I ...
Page 7
... T j Forward characteristics of reverse diode parameter -10 A -10 C iss C oss -10 C rss -10 V -25 -30 - Page 7 BSO613SPV -60 - 100 ) µs p BSO613SPV °C typ 150 °C typ °C (98 150 °C (98 0.0 -0.4 -0.8 -1 ...
Page 8
... AS j para -3. - 160 mJ 120 100 105 Drain-source breakdown voltage (BR)DSS j BSO613SPV -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 - Rev.1.3 Typ. gate charge parameter -16 V -12 - 125 165 0 ° °C 100 180 T j Page 8 BSO613SPV G ) Gate = -3.44 A pulsed D BSO613SPV 0 max 2003-03-02 DS max Gate ...
Page 9
... Rev.1.3 Page 9 BSO613SPV G 2007-03-02 ...