NDD03N60ZT4G ON Semiconductor, NDD03N60ZT4G Datasheet - Page 9

• Manufacturer Part Number: NDD03N60ZT4G
• Description: MOSFET N-CH 600V DPAK
• Manufacturer: ON Semiconductor

Specifications of NDD03N60ZT4G

• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Mounting Type: Surface Mount
• Power - Max: 61W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 Ohms
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 61 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Package: 3DPAK
• Channel Mode: Enhancement
• Channel Type: N
• Typical Fall Time: 10 ns
• Typical Rise Time: 8 ns
• Typical Turn-off Delay Time: 16 ns
• Typical Turn-on Delay Time: 9 ns
• Maximum Continuous Drain Current: 2.6 A
• Maximum Drain Source Voltage: 600 V
• Maximum Gate Source Voltage: 30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
S
SEATING
PLANE
−T−
F
V
S
F
1
B
R
4
2
1
G
3
B
R
4
2
3
L
A
D
A
K
H
2 PL
D
0.13 (0.005)
0.13 (0.005)
3 PL
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
J
J
M
M
C
0.228
5.80
T
T
C
−T−
PACKAGE DIMENSIONS
E
SEATING
PLANE
SOLDERING FOOTPRINT*
E
H
U
http://onsemi.com
0.244
6.20
CASE 369AA−01
CASE 369D−01
ISSUE B
ISSUE A
DPAK
IPAK
9
0.101
2.58
0.118
3.0
0.063
1.6
SCALE 3:1
Z
Z
6.172
0.243
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
inches
mm
ANSI Y14.5M, 1982.
STYLE 2:
DIM
PIN 1. GATE
A
B
C
D
E
G
H
K
R
S
V
F
J
Z
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.350
0.180
0.025
0.035
0.155
MIN
PER ANSI Y14.5M, 1982.
0.090 BSC
DIM
STYLE 2:
A
B
C
D
E
F
H
L
R
S
U
V
Z
INCHES
J
PIN 1. GATE
0.235
0.250
0.086
0.025
0.018
0.030
0.386
0.018
0.180
0.024
0.020
0.035
0.155
2. DRAIN
3. SOURCE
4. DRAIN
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.380
0.215
0.040
0.050
MAX
MIN
0.090 BSC
−−−
INCHES
0.245
0.265
0.094
0.035
0.024
0.045
0.410
0.023
0.215
0.040
0.050
MILLIMETERS
MAX
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
8.89
4.45
0.63
0.89
3.93
MIN
−−−
−−−
2.29 BSC
MILLIMETERS
MAX
5.97
6.35
2.19
0.63
0.46
0.77
9.80
0.46
4.57
0.60
0.51
0.89
3.93
6.35
6.73
2.38
0.88
0.58
1.14
1.01
0.58
9.65
5.45
1.01
1.27
MIN
−−−
2.29 BSC
10.40
MAX
6.22
6.73
2.38
0.89
0.61
1.14
0.58
5.45
1.01
1.27
−−−
−−−