NDD03N60ZT4G ON Semiconductor, NDD03N60ZT4G Datasheet - Page 4

• Manufacturer Part Number: NDD03N60ZT4G
• Description: MOSFET N-CH 600V DPAK
• Manufacturer: ON Semiconductor

Specifications of NDD03N60ZT4G

• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Mounting Type: Surface Mount
• Power - Max: 61W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 Ohms
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 61 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Package: 3DPAK
• Channel Mode: Enhancement
• Channel Type: N
• Typical Fall Time: 10 ns
• Typical Rise Time: 8 ns
• Typical Turn-off Delay Time: 16 ns
• Typical Turn-on Delay Time: 9 ns
• Maximum Continuous Drain Current: 2.6 A
• Maximum Drain Source Voltage: 600 V
• Maximum Gate Source Voltage: 30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
0.10
10.0
1.0
100
1.0
10
0
1
Figure 10. Resistive Switching Time Variation
V
Figure 7. Drain−to−Source Leakage Current
V
DD
50 100 150 200 250 300 350 400 450 500 550 600
GS
I
D
= 300 V
= 3 A
= 10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
T
versus Voltage
T
J
J
= 150°C
= 125°C
15.0
14.0
13.0
12.0
10.0
10
11.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
Drain−to−Source Voltage versus Total Charge
Q
1
GS
Figure 9. Gate−to−Source Voltage and
2
TYPICAL CHARACTERISTICS
Q
3
g
, TOTAL GATE CHARGE (nC)
t
t
t
t
d(off)
r
d(on)
V
f
4
http://onsemi.com
DS
5
100
Q
GD
Q
6
4
T
7
10.0
700
650
600
550
500
450
400
350
300
250
200
150
100
1.0
0.1
50
0
0.3
8
0
V
T
C
DS
I
J
9
D
rss
Figure 11. Diode Forward Voltage versus
= 25°C
0.4
5
V
= 300 V
= 3 A
GS
V
V
10
DS
SD
T
Figure 8. Capacitance Variation
10
J
0.5
, DRAIN−TO−SOURCE VOLTAGE (V)
, SOURCE−TO−DRAIN VOLTAGE (V)
= 150°C
11
15
12
0.6
C
350
300
250
200
150
100
50
0
125°C
oss
20
C
Current
0.7
iss
25
25°C
0.8
30
−55°C
0.9
35
1.0
T
V
f = 1 MHz
40
J
GS
= 25°C
= 0 V
1.1
45
1.2
50