NTD4805N-1G ON Semiconductor, NTD4805N-1G Datasheet - Page 3
![MOSFET N-CH 30V 12.6A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
NTD4805N-1G
Manufacturer Part Number
NTD4805N-1G
Description
MOSFET N-CH 30V 12.6A IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD4805NT4G.pdf
(8 pages)
Specifications of NTD4805N-1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12.6A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
2865pf @ 12V
Power - Max
1.35W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 m Ohms
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
88 A
Power Dissipation
2.24 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD4805N-1G
Manufacturer:
ON
Quantity:
12 500
DRAIN- -SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
ELECTRICAL CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise noted)
Symbol
Q
V
t
R
L
L
L
L
RR
ta
tb
SD
RR
G
S
D
D
G
http://onsemi.com
V
V
GS
I
S
GS
= 30 A
= 0 V, dIs/dt = 100 A/ms,
3
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
T
T
J
J
= 125°C
= 25°C
Min
0.0164
0.87
0.76
25.7
13.1
12.6
2.49
1.88
3.46
Typ
0.8
18
Max
1.2
Unit
nC
nH
ns
Ω
V