NTD4805N-1G ON Semiconductor, NTD4805N-1G Datasheet - Page 2

• Manufacturer Part Number: NTD4805N-1G
• Description: MOSFET N-CH 30V 12.6A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4805N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2865pf @ 12V
• Power - Max: 1.35W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 m Ohms
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Power Dissipation: 2.24 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. Surface--mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Junction--to--Case (Drain)
Junction--to--TAB (Drain)
Junction--to--Ambient -- Steady State (Note 1)
Junction--to--Ambient -- Steady State (Note 2)
Drain--to--Source Breakdown Voltage
Drain--to--Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate--to--Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain--to--Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Total Gate Charge
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
Temperature Coefficient
Parameter
Parameter
(T
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
Q
Q
V
GS(TH)
R
Q
(BR)DSS
t
t
t
t
I
GS(TH)
C
G(TOT)
Q
G(TOT)
I
DS(on)
Q
gFS
C
C
d(on)
d(off)
d(on)
d(off)
GSS
G(TH)
DSS
oss
t
t
rss
GS
GD
t
t
iss
r
f
r
f
/T
/T
J
http://onsemi.com
J
V
V
V
V
V
V
V
V
V
GS
V
GS
DS
V
V
GS
GS
GS
DS
GS
GS
11.5 V
V
I
I
GS
GS
D
D
GS
DS
= 4.5 V
= 10 to
2
= 24 V
= 11.5 V, V
= 15 A, R
= 11.5 V, V
= 15 A, R
= 0 V,
Test Condition
= 0 V, V
= 4.5 V, V
= 4.5 V, V
= V
= 0 V, f = 1.0 MHz,
= 0 V, I
= 15 V, I
V
I
I
DS
D
D
DS
= 30 A
= 30 A
, I
= 12 V
GS
D
D
G
G
D
DS
DS
= 250 mA
DS
DS
T
= 250 mA
= 3.0 Ω
= 3.0 Ω
T
= 20 V
I
I
I
I
J
= 15 A
D
D
D
D
J
= 15 V,
= 15 V,
= 125°C
= 15 V,
= 15 V,
= 25°C
= 30 A
= 15 A
= 30 A
= 15 A
Min
1.5
30
R
Symbol
θJC--TAB
R
R
R
θJC
θJA
θJA
2865
5.86
20.5
4.05
8.28
8.36
17.2
20.3
20.8
10.8
20.5
30.8
Typ
610
338
4.3
4.2
6.0
5.8
8.0
4.4
27
17
48
Value
2.25
111
3.5
67
100
Max
1.0
2.5
5.0
7.4
10
26
°C/W
Unit
mV/°C
mV/°C
Unit
mΩ
nC
nC
mA
nA
pF
ns
ns
V
V
S