2SJ356-T2-AY Renesas Electronics America, 2SJ356-T2-AY Datasheet - Page 6

• Manufacturer Part Number: 2SJ356-T2-AY
• Description: MOSFET P-CH 60V SC-62
• Manufacturer: Renesas Electronics America

Specifications of 2SJ356-T2-AY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
–0.0001
–0.001
1 000
1 000
–0.01
–0.1
100
100
–10
10
10
–1
1
0
–0.2
1 m
V
Pulsed
V
V
GS
DD
GS(on)
Single pulse
Using ceramic substrate of
7.5 cm
= 0
= –25 V
SWITCHING CHARACTERISTICS
–0.4
V
= –10 V
SD
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
2
- Source to Drain Voltage - V
I
D
0.7 mm
- Drain Current - A
–0.6
10 m
–1
t
t
t
d(off)
f
d(on)
–0.8
t
r
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
–1.0
100 m
–1.2
–10
PW - Pulse Width - s
10 000
1 000
1 000
100
100
10
10
–0.05
–1
1
V
f = 1 MHz
V
di/dt = 50 A/ s
GS
GS
–0.1
= 0
= 0
V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
DS
I
F
- Diode Forward Current -A
- Drain to Source Voltage - V
–0.5
–10
10
–1
C
C
C
iss
oss
rss
–5
2SJ356
–100
–10
100