2SJ356-T2-AY Renesas Electronics America, 2SJ356-T2-AY Datasheet - Page 4
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2SJ356-T2-AY
Manufacturer Part Number
2SJ356-T2-AY
Description
MOSFET P-CH 60V SC-62
Manufacturer
Renesas Electronics America
Datasheet
1.2SJ356-T1-AY.pdf
(8 pages)
Specifications of 2SJ356-T2-AY
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
500 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
11.6nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS (T
TYPICAL CHARACTERISTICS (T
2
Drain Cut-Off Current
Gate Leakage Current
Gate Cut-Off Voltage
Forward Transfer Admittance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Charge
Gate to Source Charge
Gate to Drain Charge
Internal Diode Reverse Recovery Time
Internal Diode Reverse Recovery Charge
100
80
60
40
20
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
PARAMETER
25
T
A
- Ambient Temperature - ˚C
50
75
100
SYMBOL
I
I
V
|y
R
R
C
C
t
t
t
t
Q
Q
Q
t
Q
DSS
GSS
C
d(on)
r
d(off)
f
rr
GS(off)
DS(on)1
DS(on)2
oss
rss
fs
G
GS
GD
rr
A
iss
|
= 25 ˚C)
125
A
= 25 ˚C)
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
di/dt = 50 A/ s
D
F
150
DS
GS
DS
DS
GS
GS
DS
DD
GS(on)
G
DS
GS
= 2.0 A,
= –2.0 A, I
= 10
= –60 V, V
= –16/+10 V, V
= –10 V, I
= –10 V, I
= –4 V, I
= –10 V, I
= –10 V, V
= –25 V, I
= –48 V,
= –10 V,
TEST CONDITIONS
= –10 V
, R
D
G
L
D
D
D
D
= –1.0 A
= 25
GS
GS
= –2 mA
= –1 mA
= –1.0 A
= –1.0 A
= –1.0 A
= 0
= 0,
–0.05
DS
–0.5
–0.2
–0.1
–10
= 0
–5
–2
–1
–0.5
FORWARD BIAS SAFE OPERATING AREA
Single pulse
–1
V
DS
–2
- Drain to Source Voltage - V
MIN.
–1.0
1.0
–5
TYP.
–1.4
0.65
0.41
11.6
270
145
115
4.3
1.0
3.8
55
21
75
82
94
–10 –20
MAX.
–2.0
0.95
0.50
–10
10
–50
UNIT
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
2SJ356
A
A
–100