IPD30N03S2L-10 Infineon Technologies, IPD30N03S2L-10 Datasheet

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IPD30N03S2L-10

Manufacturer Part Number
IPD30N03S2L-10
Description
MOSFET N-CH 30V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD30N03S2L-10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 50µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000254465

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD30N03S2L-10
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
OptiMOS
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD30N03S2L-10
Green package (lead free)
®
Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
2N03L10
stg
T
T
V
T
I
T
D
C
C
C
C
GS
=30A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
-55 ... +175
55/175/56
Value
120
150
±20
100
30
30
PG-TO252-3-11
IPD30N03S2L-10
30
10
30
2006-07-18
Unit
A
mJ
V
W
°C
V
m
A

Related parts for IPD30N03S2L-10

IPD30N03S2L-10 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary DS(on),max I D Marking 2N03L10 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =30A =25 °C tot stg page 1 IPD30N03S2L- PG-TO252-3-11 Value Unit 120 150 mJ ±20 V 100 W -55 ... +175 °C 55/175/56 2006-07-18 ...

Page 2

... (BR)DSS =50 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 =30 A DS(on = =30 A, DS(on page 2 IPD30N03S2L-10 Values min. typ. max 1 100 - - 1.2 1 100 = 100 - 12.0 14.6 - 8.3 10.0 Unit K µ mΩ 2006-07-18 ...

Page 3

... Conditions C iss oss f =1 MHz C rss t d( d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ = /dt =100 A/µ 1.5K/W the chip is able to carry 76A at 25°C. For detailed information thJC page 3 IPD30N03S2L-10 Values min. typ. max. - 1200 = 470 - 130 - = Unit - 4 120 1 2006-07-18 ...

Page 4

... Safe operating area ° parameter 1000 100 Rev. 1.0 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µs 100 µ 100 [V] page 4 IPD30N03S2L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2006-07-18 ...

Page 5

... DS j parameter 120 100 Typ. transfer characteristics parameter 120 100 175 ° Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter [V] 8 Typ. Forward transconductance g = f(I fs parameter °C 10 -55 ° [V] page 5 IPD30N03S2L- ° 25° [ 100 120 100 120 2006-07-18 ...

Page 6

... V DS Rev. 1.0 10 Typ. gate threshold voltage V = f(T GS(th) parameter: I 2.5 2 1.5 1 0.5 0 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter: T Ciss Coss Crss [V] page 6 IPD30N03S2L- 400 µA 50 µA -60 - 100 T [° °C 175 °C 0.4 0.6 0 [V] SD 140 180 1.2 1.4 ...

Page 7

... A 500 400 15 A 300 200 30 A 100 [° Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V = f(Q GS gate 125 175 0 16 Gate charge waveforms 100 140 180 page 7 IPD30N03S2L- pulsed [nC] gate gate gate 2006-07-18 32 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD30N03S2L-10 2006-07-18 ...

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