NTD5407NT4G ON Semiconductor, NTD5407NT4G Datasheet - Page 3

• Manufacturer Part Number: NTD5407NT4G
• Description: MOSFET N-CH 40V 38A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD5407NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 32V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.026 Ohms
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
60
50
40
30
20
10
0
1.8
1.6
1.4
1.2
0.8
0.6
0
Figure 3. On−Resistance vs. Gate−to−Source
2
1
−50
3
I
V
V
1
V
D
Figure 1. On−Region Characteristics
GS
GS
−25
DS
4
= 20 A
Figure 5. On−Resistance Variation with
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 10 V
2
5
T
V
0
J
GS
, JUNCTION TEMPERATURE (°C)
3
= 7 V to 10 V
6
25
4
Voltage
Temperature
7
50
5
8
75
6
TYPICAL PERFORMANCE CURVES
100
9
7
T
J
= 25°C
10
125
8
I
T
D
J
= 38 A
http://onsemi.com
= 25°C
11
4.5 V
5.5 V
3.5 V
9
150
5 V
4 V
6 V
10
12
175
3
10000
0.105
0.095
0.085
0.075
0.065
0.055
0.045
0.035
0.025
0.015
0.005
1000
100
10
60
50
40
30
20
10
1
0
10
5
Figure 4. On−Resistance vs. Drain Current and
0
V
T
V
GS
Figure 6. Drain−to−Source Leakage Current
J
DS
= 25°C
V
V
= 0 V
1
10
≥ 10 V
DS
GS
15
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
T
I
D,
J
2
= 25°C
DRAIN CURRENT (AMPS)
15
T
20
J
= 100°C
Gate Voltage
3
vs. Voltage
20
T
T
V
V
J
J
GS
GS
= 175°C
= 100°C
25
4
= 10 V
= 5 V
T
J
25
= −55°C
5
30
30
6
35
35
7
40
40
8