ntd5407 ON Semiconductor, ntd5407 Datasheet

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ntd5407

Manufacturer Part Number
ntd5407
Description
Power Mosfet
Manufacturer
ON Semiconductor
Datasheet

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NTD5407N
Power MOSFET
40 V, 38 A, Single N−Channel, DPAK
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 0
MAXIMUM RATINGS
Continuous Drain
Current − R
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Power Dissipation −
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to Source Avalanche
Energy − (V
L = 1 mH, R
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction−to−Case (Drain)
Low R
High Current Capability
Low Gate Charge
These are Pb−Free Devices
Electronic Brake Systems
Electronic Power Steering
Bridge Circuits
qJC
(Cu area = 1.127 in sq [1 oz] including traces).
(Note 1)
DS(on)
qJC
DD
G
= 25 W)
(Note 1)
= 50 V, V
Parameter
Parameter
GS
(T
Steady
Steady
State
State
J
= 10 V, I
= 25°C unless otherwise stated)
t
p
= 10 ms
T
T
T
PK
C
C
C
= 100°C
= 25°C
= 25°C
= 17 A,
(Note 1)
Symbol
Symbol
V
T
R
EAS
V
I
T
P
DSS
DM
STG
T
I
I
θJC
GS
D
S
J
D
L
,
−55 to
Value
Max
±20
175
150
260
2.0
40
38
27
75
75
36
1
Units
Units
°C/W
mJ
°
°C
W
V
V
A
A
A
C
†For information on tape and reel specifications,
NTD5407NG
NTD5407NT4G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
(BR)DSS
Device
40 V
1 2
CASE 369C
STYLE 2
DPAK
ORDERING INFORMATION
G
3
Y
WW
5407N
G
http://onsemi.com
4
21 mΩ @ 10 V
R
(Pb−Free)
(Pb−Free)
N−Channel
Package
DS(ON)
DPAK
DPAK
= Year
= Work Week
= Specific Device Code
= Pb−Free Device
D
Publication Order Number:
S
TYP
1
2500 / Tape & Reel
MARKING
DIAGRAM
75 Units / Rail
Shipping†
NTD5407N/D
07NG
YWW
(Note 1)
I
D
38 A
54
MAX

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ntd5407 Summary of contents

Page 1

... Shipping† NTD5407NG DPAK 75 Units / Rail (Pb−Free) NTD5407NT4G DPAK 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTD5407N/D MAX ...

Page 2

... DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. NTD5407N (T = 25°C unless otherwise stated) J Symbol Test Condition = 250 mA V ...

Page 3

... Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.8 GS 1.6 1.4 1.2 1 0.8 0.6 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTD5407N 25°C ≥ GATE− ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 100 GATE RESISTANCE (OHMS) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance NTD5407N TYPICAL PERFORMANCE CURVES 25° iss oss Figure 8. Gate− ...

Page 5

... 0.13 (0.005 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD5407N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 6

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD5407N/D ...

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