NTD2955T4G ON Semiconductor, NTD2955T4G Datasheet - Page 4

• Manufacturer Part Number: NTD2955T4G
• Description: MOSFET P-CH 60V 12A DPAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTD2955T4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.18Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 12A
• Power Dissipation: 55W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.18 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD2955T4GOSTR

1000
100
100
0.1
1200
1000
10
10
800
600
400
200
1
1
0.1
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
0
1
10
Figure 11. Maximum Rated Forward Biased
V
I
V
T
V
SINGLE PULSE
T
C
C
D
DD
GS
J
C
GS
iss
rss
= -12 A
= 25°C
= 25°C
V
-V
= -30 V
= -10 V
= -15 V
Figure 9. Resistive Switching Time
DS
5
t
t
Variation versus Gate Resistance
d(off)
d(on)
Figure 7. Capacitance Variation
DS
-V
= 0 V
t
t
r
f
GS
, DRAIN-TO-SOURCE VOLTAGE (V)
R
G
Safe Operating Area
0
, GATE RESISTANCE (W)
1
V
-V
GS
DS
= 0 V
5
R
THERMAL LIMIT
PACKAGE LIMIT
100 ms
10
DS(on)
10
1 ms
LIMIT
10
10 ms
15
dc
NTD2955, NTD2955P
T
C
J
C
C
20
= 25°C
oss
iss
rss
http://onsemi.com
100
100
25
4
12.5
7.5
2.5
15
10
5
0
0
Figure 8. Gate-To-Source and Drain-To-Source
15
10
V
5
0
Figure 10. Diode Forward Voltage versus Current
DS
0
Q
Figure 12. Diode Reverse Recovery Waveform
GS
2
V
T
I
S
J
GS
0.25
= 25°C
-V
Q
Voltage versus Total Charge
= 0 V
4
SD
T
, TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (V)
t
p
0.5
6
Q
GD
di/dt
0.75
Q
8
t
T
a
t
rr
10
t
1
b
I
S
0.25 I
12
1.25
S
I
T
D
J
= 12 A
14
= 25°C
V
1.5
GS
TIME
16
60
50
40
30
20
10
0
1.75