IPD25N06S2-40 Infineon Technologies, IPD25N06S2-40 Datasheet - Page 6

• Manufacturer Part Number: IPD25N06S2-40
• Description: MOSFET N-CH 55V 29A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD25N06S2-40

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 26µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 513pF @ 25V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 40 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 2.1 V
• Continuous Drain Current: 25 A
• Power Dissipation: 68 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000252164

Rev. 1.0
9 Typ. Drain-source on-state resistance
R
parameter: I
11 Typ. capacitances
C = f(V
DS(ON)
10
10
10
60
50
40
30
20
10
DS
4
3
2
= f(T
-60
0
); V
D
j
)
GS
= 13 A; V
-20
= 0 V; f = 1 MHz
5
20
10
GS
= 10 V
V
T
DS
j
60
15
[°C]
[V]
100
20
140
25
Crss
Coss
Ciss
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
3.5
2.5
1.5
10
10
10
10
= f(T
4
3
2
1
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
0.4
= V
175 °C
20
DS
0.6
26 µA
V
T
25 °C
SD
j
0.8
60
[°C]
[V]
130 µA
1
IPD25N06S2-40
100
1.2
140
2006-07-18
1.4
180
1.6