NTF5P03T3G ON Semiconductor, NTF5P03T3G Datasheet - Page 6

• Manufacturer Part Number: NTF5P03T3G
• Description: MOSFET P-CH 30V 3.7A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF5P03T3G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 25V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 3.9 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 5.2 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF5P03T3GOS; NTF5P03T3GOS; NTF5P03T3GOSTR

0.01
0.1
1.0E−03
1
SINGLE PULSE
D = 0.5
0.1
0.05
0.02
0.2
0.01
1.0E−02
TYPICAL ELECTRICAL CHARACTERISTICS
1.0E−01
Figure 13. FET Thermal Response
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NTF5P03T3
CHIP
JUNCTION
t, TIME (s)
6
1.0E+00
NORMALIZED TO R
0.0154 F
0.0175 W
0.0854 F
0.0710 W
1.0E+01
qJA
0.3074 F
0.2706 W
AT STEADY STATE (1″ PAD)
0.5779 W
1.7891 F
1.0E+02
107.55 F
0.7086 W
AMBIENT
1.0E+03