IPD30N03S2L-20 Infineon Technologies, IPD30N03S2L-20 Datasheet - Page 5

• Manufacturer Part Number: IPD30N03S2L-20
• Description: MOSFET N-CH 30V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N03S2L-20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 23µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000254466

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
120
100
120
100
80
60
40
20
80
60
40
20
0
0
DS
GS
0
0
); T
); V
10 V
GS
j
j
DS
= 25 °C
1
= 6V
2
2
175 °C
4
V
V
GS
DS
5 V
4.5 V
[V]
4 V
3.5 V
3 V
2.5 V
[V]
3
25 °C
6
-55 °C
4
8
5
10
page 5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
60
50
40
30
20
10
70
60
50
40
30
20
10
0
= (I
D
0
0
); T
3 V
3.5 V
10 V
D
); T
j
= 25°C
fs
GS
20
20
5 V
j
4 V
= 25 °C
4.5 V
40
40
I
I
D
D
60
60
[A]
[A]
IPD30N03S2L-20
80
80
100
100
2006-07-18
120
120