BSS126 L6906 Infineon Technologies, BSS126 L6906 Datasheet - Page 2

• Manufacturer Part Number: BSS126 L6906
• Description: MOSFET N-CH 600V 21MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS126 L6906

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21mA
• Vgs(th) (max) @ Id: 1.6V @ 8µA
• Gate Charge (qg) @ Vgs: 2.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 28pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000247304

Rev. 1.6
2)
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
Transconductance
Threshold voltage V
J
K
L
M
N
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
GS(th)
sorted in bands
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
I
R
g
V
D(off)
GSS
DSS
fs
(BR)DSS
GS(th)
GS(th)
thJA
DS(on)
2)
minimal footprint
V
V
V
V
V
V
V
V
V
V
|V
I
V
D
page 2
GS
DS
DS
GS
DS
GS
GS
GS
GS
GS
DS
=0.01 A
DS
=3 V, I
=600 V,
=600 V,
=3 V, I
=-5 V, I
=-5 V, T
=-5 V, T
=20 V, V
=0 V, V
=0 V, I
=10 V, I
|>2|I
D
|R
D
D
D
D
DS
=8 µA
=8 µA
=3 mA
D
j
j
=250 µA
=25 °C
=125 °C
DS
DS(on)max
=16 mA
=25 V
=0 V
,
0.008
-1.95
-2.25
min.
600
-2.7
-1.8
-2.1
-2.4
7
-
-
-
-
-
-
Values
0.017
typ.
-2.0
320
280
-
-
-
-
-
-
-
-
-
-
-
max.
-1.75
-2.05
-1.6
-1.6
-1.9
-2.2
250
100
700
500
0.1
10
-
-
-
BSS126
Unit
K/W
V
µA
nA
mA
Ω
S
V
2009-08-18