NTLJS3113PT1G ON Semiconductor, NTLJS3113PT1G Datasheet - Page 5

• Manufacturer Part Number: NTLJS3113PT1G
• Description: MOSFET P-CH 20V 3.5A 6-WFDN
• Manufacturer: ON Semiconductor

Specifications of NTLJS3113PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1329pF @ 16V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTLJS3113PT1G; NTLJS3113PT1GOSTR

1000
100
0.000001
0.1
10
1
0.02
D = 0.5
0.05
0.01
0.2
0.1
0.00001
TYPICAL PERFORMANCE CURVES
SINGLE PULSE
0.0001
0.001
Figure 12. Thermal Response
http://onsemi.com
NTLJS3113P
0.01
t, TIME (sec)
5
P
(pk)
(T
DUTY CYCLE, D = t
J
0.1
= 25°C unless otherwise noted)
t
1
t
2
1
1
/t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
2
J(pk)
See Note 2 on Page 1
- T
10
A
= P
(pk)
1
R
qJA
100
(t)
1000