NTLJS3113PT1G ON Semiconductor, NTLJS3113PT1G Datasheet

NTLJS3113PT1G

Manufacturer Part Number

NTLJS3113PT1G

Description

MOSFET P-CH 20V 3.5A 6-WFDN

Manufacturer

ON Semiconductor

Datasheet

1.NTLJS3113PTAG.pdf (6 pages)

Specifications of NTLJS3113PT1G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

40 mOhm @ 3A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

3.5A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

15.7nC @ 4.5V

Input Capacitance (ciss) @ Vds

1329pF @ 16V

Power - Max

700mW

Mounting Type

Surface Mount

Package / Case

6-VDFN Exposed Pad

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTLJS3113PT1G
NTLJS3113PT1GOSTR

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NTLJS3113P

Power MOSFET

-20 V, -7.7 A, mCoolt Single P-Channel,

2x2 mm, WDFN Package

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

2. Surface Mounted on FR4 Board using the minimum recommended pad size,

October, 2007 - Rev. 4

MAXIMUM RATINGS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 2)

Power Dissipation

(Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode) (Note 2)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Conduction

Drive

Portable Equipment such as, Cell Phones, PDA's, Media Players, etc.

WDFN Package Provides Exposed Drain Pad for Excellent Thermal

2x2 mm Footprint Same as SC-88 Package

Lowest R

1.5 V R

Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

This is a Pb-Free Device

DC-DC Converters (Buck and Boost Circuits)

Optimized for Battery and Load Management Applications in

High Side Load Switch

[2 oz] including traces).

(30 mm

DS(on)

, 2 oz Cu).

DS(on)

Parameter

Rating for Operation at Low Voltage Logic Level Gate

Solution in 2x2 mm Package

Steady

t ≤ 5 s

State

= 25°C unless otherwise noted)

= 10 ms

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

, T

DSS

STG

-55 to

Value

±8.0

-5.8

-4.4

-7.7

-3.5

-2.5

-2.8

-20

-23

150

260

1.9

3.3

0.7

Unit

°C

†For information on tape and reel specifications,

NTLJS3113PT1G

NTLJS3113PTAG

Pin 1

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(BR)DSS

-20 V

Device

ORDERING INFORMATION

(Note: Microdot may be in either location)

200 mW @ -1.5 V

PIN CONNECTIONS

40 mW @ -4.5 V

50 mW @ -2.5 V

75 mW @ -1.8 V

http://onsemi.com

P-CHANNEL MOSFET

= Specific Device Code

= Date Code

= Pb-Free Package

DS(on)

(Top View)

CASE 506AP

(Pb-Free)

Package

WDFN6

MAX

Publication Order Number:

3000/Tape & Reel

NTLJS3113P/D

Shipping

MAX (Note 1)

MARKING

DIAGRAM

-7.7 A

J8MG

†

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NTLJS3113PT1G Summary of contents

Page 1

... A DM ° - STG 150 I -2 °C T 260 L NTLJS3113PT1G NTLJS3113PTAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R MAX I MAX (Note 1) DS(on -4 -2 -1.8 V 200 mW @ -1.5 V ...

Page 2

THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – t ≤ (Note 3) Junction-to-Ambient – Steady State Min Pad (Note 4) 3. Surface Mounted on FR4 Board using pad size (Cu area ...

Page 3

TYPICAL PERFORMANCE CURVES -1 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On-Region Characteristics 0. -4.5 ...

Page 4

TYPICAL PERFORMANCE CURVES 2800 2400 C iss 2000 1600 1200 C rss 800 C oss 400 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. ...

Page 5

TYPICAL PERFORMANCE CURVES 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 NTLJS3113P (T = 25°C unless otherwise noted (pk DUTY CYCLE ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...

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