MGSF1N03LT1G ON Semiconductor, MGSF1N03LT1G Datasheet - Page 3

• Manufacturer Part Number: MGSF1N03LT1G
• Description: MOSFET N-CH 30V 1.6A SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of MGSF1N03LT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Input Capacitance (ciss) @ Vds: 140pF @ 5V
• Power - Max: 420mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 730 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: 1.6 A
• Gate Charge, Total: 6000 pC
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.08 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 16 ns
• Time, Turn-on Delay: 2.5 ns
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 0.8 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 2.1A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MGSF1N03LT1GOS; MGSF1N03LT1GOS; MGSF1N03LT1GOSTR

0.001
0.01
0.24
0.19
0.14
0.09
0.04
Figure 5. On−Resistance Variation with Temperature
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1
1
0
−55
0
0
Figure 3. On−Resistance versus Drain Current
V
0.1
0.1
Figure 7. Body Diode Forward Voltage
GS
−25
= 4.5 V
V
0.2
0.2
SD
T
, DIODE FORWARD VOLTAGE (VOLTS)
0
J
, JUNCTION TEMPERATURE (°C)
I
0.3
D
0.3
, DRAIN CURRENT (AMPS)
T
25
J
0.4
= 150°C
0.4
0.5
50
0.5
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
V
I
75
D
GS
0.6
= 2 A
= 10 V
0.7
25°C
100
0.7
V
I
D
GS
0.8
= 1 A
−55°C
= 4.5 V
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MGSF1N03LT1
125
0.8
−55°C
150°C
25°C
0.9
0.9
150
1
3
0.16
0.14
0.12
0.08
0.06
0.04
350
300
250
200
150
100
0.1
10
50
8
6
4
2
0
0
0
0
0
Figure 4. On−Resistance versus Drain Current
V
V
T
GS
DS
J
0.2
= 25°C
= 10 V
= 24 V
1000
0.4
4
V
DS
Figure 6. Gate Charge
Q
Figure 8. Capacitance
, DRAIN−TO−SOURCE VOLTAGE (Volts)
0.6
I
T
2000
D
, TOTAL GATE CHARGE (pC)
, DRAIN CURRENT (AMPS)
0.8
8
I
D
= 2.0 A
3000
1
1.2
12
4000
1.4
1.6
16
V
f = 1 MHz
T
5000
GS
J
= 25°C
−55°C
150°C
25°C
= 0 V
C
C
C
1.8
iss
oss
rss
6000
20
2