MGSF1N03LT1G ON Semiconductor, MGSF1N03LT1G Datasheet

MGSF1N03LT1G

Manufacturer Part Number

MGSF1N03LT1G

Description

MOSFET N-CH 30V 1.6A SOT-23

Manufacturer

ON Semiconductor

Type

Power MOSFETr

Datasheets

1.MGSF1N03LT1G.pdf (4 pages)

2.MGSF1N03LT1G.pdf (3 pages)

Specifications of MGSF1N03LT1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

100 mOhm @ 1.2A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

1.6A

Vgs(th) (max) @ Id

2.4V @ 250µA

Input Capacitance (ciss) @ Vds

140pF @ 5V

Power - Max

420mW

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.1 Ohm @ 10 V

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2.1 A

Power Dissipation

730 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Current, Drain

1.6 A

Gate Charge, Total

6000 pC

Package Type

SOT-23 (TO-236)

Polarization

N-Channel

Resistance, Drain To Source On

0.08 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

16 ns

Time, Turn-on Delay

2.5 ns

Voltage, Breakdown, Drain To Source

30 V

Voltage, Forward, Diode

0.8 V

Voltage, Gate To Source

±20 V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.1Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±20V

Drain Current (max)

2.1A

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MGSF1N03LT1GOS
MGSF1N03LT1GOS
MGSF1N03LT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Part Number:

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Manufacturer:

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3 400

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Manufacturer:

Quantity:

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Part Number:

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Manufacturer:

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Quantity:

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Company:

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Current page: 1 of 4
Download datasheet (70Kb)

MGSF1N03LT1

Power MOSFET

30 V, 2.1 A, Single N−Channel, SOT−23

minimal power loss and conserve energy, making these devices ideal

for use in space sensitive power management circuitry. Typical

applications are dc−dc converters and power management in portable

and battery−powered products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface−mounted on FR4 board using 1 in sq pad size.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

3. ESD Rating Information: HBM Class 0.

MAXIMUM RATINGS

December, 2005 − Rev. 8

THERMAL RESISTANCE RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 2)

Power Dissipation

(Note 2)

Pulsed Drain Current

ESD Capability

(Note 3)

Operating Junction and Storage Temperature T

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 sec)

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t < 10 s (Note 1)

Junction−to−Ambient − Steady State (Note 2)

These miniature surface mount MOSFETs low R

Low R

Miniature SOT−23 Surface Mount Package Saves Board Space

Pb−Free Packages are Available

DS(on)

Provides Higher Efficiency and Extends Battery Life

Parameter

t ≤ 10 s T

Steady

State

= 25°C unless otherwise noted)

RS = 1500 W

C = 100 pF,

Preferred Device

= 10 ms

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

ESD

, T

DSS

qJA

STG

−55 to 150

Value

0.73

0.42

Max

±20

125

260

170

100

300

DS(on)

2.1

1.5

2.8

1.6

1.1

6.0

2.1

assure

°C/W

Unit

°C

†For information on tape and reel specifications,

Preferred devices are recommended choices for future use

and best overall value.

MGSF1N03LT1

MGSF1N03LT1G

MGSF1N03LT3

MGSF1N03LT3G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

(BR)DSS

vary depending upon manufacturing location.

30 V

(Note: Microdot may be in either location)

Device

ORDERING INFORMATION

http://onsemi.com

CASE 318

STYLE 21

SOT−23

= Specific Device Code

= Date Code*

= Pb−Free Package

125 mW @ 4.5 V

80 mW @ 10 V

N−Channel

(Pb−Free)

Package

SOT−23

Pb−Free

SOT−23

DS(on)

Publication Order Number:

MARKING DIAGRAM/

PIN ASSIGNMENT

TYP

Gate

10,000/Tape & Reel

3000/Tape & Reel

MGSF1N03LT1/D

N3 M G

Drain

Shipping

Source

2.1 A

MAX

†

Related parts for MGSF1N03LT1G

MGSF1N03LT1G Summary of contents

Page 1

... Unit Device °C/W R 170 qJA MGSF1N03LT1 R 100 qJA MGSF1N03LT1G 300 R qJA MGSF1N03LT3 MGSF1N03LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage = 10 mAdc Vdc Zero Gate Voltage Drain Current ( Vdc Vdc Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 0. 0.14 0.09 0.04 0 0.1 0.2 0.3 0.4 0.5 0 DRAIN CURRENT (AMPS) D Figure 3. On−Resistance versus Drain Current 1.8 1 1.4 1.2 1 ...

Page 4

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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