NTGS3441T1G ON Semiconductor, NTGS3441T1G Datasheet - Page 4

• Manufacturer Part Number: NTGS3441T1G
• Description: MOSFET P-CH 20V 1.65A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS3441T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.65A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 480pF @ 5V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS3441T1GOSTR

1200
900
600
300
1.3
1.2
1.1
0.9
0.8
0.7
0.6
1
0
−50
8
C
C
Figure 9. Gate Threshold Voltage Variation
V
iss
rss
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
−25
DS
−V
4
= 0 V
GS
T
Figure 7. Capacitance Variation
J,
JUNCTION TEMPERATURE (°C)
0
0
with Temperature
V
VOLTAGE (VOLTS)
GS
25
−V
= 0 V
DS
4
50
TYPICAL ELECTRICAL CHARACTERISTICS
I
D
= −250 mA
8
75
12
100
C
C
C
T
oss
iss
rss
J
http://onsemi.com
= 25°C
125
16
150
20
4
10
8
6
4
2
0
0.5
8
6
4
2
0
0
Figure 10. Diode Forward Voltage vs. Current
V
T
GS
J
Q
−V
Drain−to−Source Voltage vs. Total Charge
0.6
= 25°C
gs
= 0 V
SD,
SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.7
Figure 8. Gate−to−Source and
Q
2
g
, TOTAL GATE CHARGE (nC)
Q
0.8
gd
QT
0.9
4
1
1.1
V
I
T
D
J
DD
= −3.3 A
= 25°C
1.2
6
= −20 V
1.3
1.4
8