NTGS3441T1G ON Semiconductor, NTGS3441T1G Datasheet - Page 3

• Manufacturer Part Number: NTGS3441T1G
• Description: MOSFET P-CH 20V 1.65A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS3441T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.65A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 480pF @ 5V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS3441T1GOSTR

10
1.4
1.2
0.8
0.6
8
6
4
2
0
0.4
0.3
0.2
0.1
1
−50
0
0
T
2
J
Figure 3. On−Resistance vs. Gate−to−Source
−V
= 25°C
I
V
D
−25
−V
GS
Figure 5. On−Resistance Variation with
DS
Figure 1. On−Region Characteristics
= −3.3 A
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
= −4.5 V
0.4
3
T
, GATE−TO−SOURCE VOLTAGE (VOLTS)
J
, JUNCTION TEMPERATURE (°C)
0
V
GS
V
4
GS
0.8
25
= −10 V
Temperature
V
GS
V
= −6 V
GS
V
Voltage
= −4.5 V
GS
= −4 V
50
5
V
= −3.5 V
TYPICAL ELECTRICAL CHARACTERISTICS
GS
1.2
= −3 V
75
V
GS
6
V
V
V
100
GS
GS
GS
= −2.7 V
1.6
I
T
D
= −2.5 V
= −2 V
= −1.5 V
J
= −3.3 A
= 25°C
http://onsemi.com
7
125
2
150
8
3
100
0.28
0.24
0.16
0.12
0.08
0.04
0.1
10
0.2
20
16
12
1
8
4
0
0
0.4
0
Figure 4. On−Resistance vs. Drain Current and
0
V
Figure 6. Drain−to−Source Leakage Current
GS
V
T
−V
DS
0.8
J
−V
= 0 V
= 25°C
DS
> = −10 V
GS
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
4
1.2
−I
D,
DRAIN CURRENT (AMPS)
1.6
Gate Voltage
vs. Voltage
V
V
8
8
GS
GS
2
T
T
T
T
= −4.5 V
J
= −2.5 V
J
J
J
= 125°C
= −55°C
= 100°C
T
= 25°C
J
2.4
= 25°C
12
12
2.8
T
J
3.2
= 100°C
16
16
3.6
20
20
4