NTR4170NT1G ON Semiconductor, NTR4170NT1G Datasheet
NTR4170NT1G
Specifications of NTR4170NT1G
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NTR4170NT1G Summary of contents
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... I 0. 260 T °C L Symbol Max Unit Device R 260 °C/W qJA NTR4170NT1G R 153 qJA R 100 NTR4170NT3G qJA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R MAX ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance Forward Transconductance CHARGES, CAPACITANCES AND GATE ...
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V 4.5 V 2.5 V 3.0 2.0 V 2.5 2.0 1.5 1.0 0 0.5 1.0 1.5 2 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.12 0.10 0.08 0.06 0.04 0.02 1.0 2.0 3.0 ...
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C iss 400 300 200 100 C oss C rss 0 0 4.0 8 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 3 ...
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... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...