NTR4170NT1G ON Semiconductor, NTR4170NT1G Datasheet - Page 2

• Manufacturer Part Number: NTR4170NT1G
• Description: MOSFET N-CH 30V 3.2A SOT23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTR4170NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 4.76nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 432pF @ 15V
• Power - Max: 780mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A
• Power Dissipation: 780 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.055Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

2. Surface−mounted on FR4 board using 1 in sq pad size (CU area = 1.127 in sq [2 oz] including traces).
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS, V
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
GS
= 4.5 V (Note 4)
V
V
(T
Symbol
Q
V
V
R
Q
(BR)DSS
(BR)DSS
t
GS(TH)
GS(TH)
t
I
I
C
G(TOT)
Q
Q
Q
J
DS(on)
C
C
V
g
d(on)
d(off)
GSS
G(TH)
t
/T
DSS
/T
R
RR
t
t
oss
t
= 25°C unless otherwise noted)
FS
GS
GD
t
SD
RR
iss
rss
a
b
r
f
G
J
J
V
V
V
I
GS
http://onsemi.com
D
GS
GS
= 250 mA, Reference to 25°C
V
= 0 V, V
V
V
= 0 V, V
V
V
V
V
V
V
GS
= 0 V, I
V
GS
I
V
DS
D
GS
GS
GS
GS
GS
DS
GS
GS
dI
Test Conditions
= 3.2 A, R
= 4.5 V, V
= 4.5 V, V
= 0 V, V
SD
= V
= 0 V, f = 1.0 MHz,
= 0 V, I
= 4.5 V, I
= 2.5 V, I
= 5.0 V, I
= 10 V, I
= 0 V, I
V
2
I
DS
/d
S
DS
D
DS
DS
t
= 1.0 A, T
= 3.2 A
= 24 V, T
= 100 A/ms
, I
= 24 V, T
= 15 V
GS
D
S
D
G
DD
D
DS
= 250 mA
D
D
D
= 1.0 A,
= 250 mA
= "12 V
= 6.2 W
= 3.2 A
= 2.8 A
= 2.0 A
= 3.2 A
= 15 V,
= 15 V,
J
J
J
= 125°C
= 25°C
= 25°C
Min
0.6
30
26.4
53.6
37.1
4.76
15.1
0.75
Typ
432
1.0
3.3
8.0
0.3
1.0
1.4
3.8
6.4
9.9
3.5
8.0
5.1
2.9
2.9
45
50
64
$100
Max
110
1.0
5.0
1.4
1.0
55
70
mV/°C
mV/°C
Units
mW
nA
nC
nC
mA
pF
ns
ns
W
V
V
S
V