NTJS3151PT1G ON Semiconductor, NTJS3151PT1G Datasheet - Page 2

• Manufacturer Part Number: NTJS3151PT1G
• Description: MOSFET P-CH 12V 2.7A SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJS3151PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 400mV @ 100µA
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 850pF @ 12V
• Power - Max: 625mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJS3151PT1GOSTR

2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Temperature Coefficient
Coefficient
Parameter
(T
V
V
V
J
(BR)DSS
Symbol
V
GS(TH)
Q
R
=25°C unless otherwise stated)
t
(BR)DSS
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
DS(on)
d(ON)
V
g
DSS
GSS
R
OSS
RSS
FS
ISS
t
t
SD
GS
GD
G
r
f
/T
/T
J
J
http://onsemi.com
V
V
V
GS
V
GS
GS
V
I
V
V
V
V
V
V
S
V
V
V
I
GS
GS
GS
GS
D
DS
GS
DS
GS
GS
GS
= −3.3 A
DS
= −9.6 V,
= −4.5 V, V
= −4.5 V, V
= −1.0 A, R
= 0 V,
Test Condition
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= 0 V
= −10 V, I
= 0 V, V
= 0 V, I
= 0 V, f = 1.0 MHz,
= 0 V, V
= V
V
I
DS
D
2
DS
= −3.3 A
= −12 V
, I
D
GS
GS
D
DD
= −250 mA
DS
D
D
D
D
G
= 100 mA
= ±4.5 V
= −3.3 A
= ±12 V
T
= −3.3 A
= −2.9 A
= −1.0 A
= 6.0 W
T
= −5.0 V,
= −6.0 V,
T
T
J
J
J
J
= 125°C
= 125°C
= 25°C
= 25°C
−0.40
Min
−12
−0.85
3000
−2.5
0.86
−0.7
Typ
133
850
170
110
3.4
8.6
1.3
2.2
1.5
3.5
3.9
10
45
67
15
Max
−1.0
±1.5
−1.2
±10
160
60
90
mV/°C
mV/°C
Unit
mA
mW
mA
mA
nC
pF
ms
W
V
V
S
V