NTJS3151PT1G ON Semiconductor, NTJS3151PT1G Datasheet
NTJS3151PT1G
Specifications of NTJS3151PT1G
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NTJS3151PT1G Summary of contents
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NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • Leading Trench Technology for Low R • SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) • Gate Diodes for ESD Protection • Pb−Free Packages are Available ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...
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TYPICAL PERFORMANCE CURVES −4 −3 −2 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 −4 ...
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TYPICAL PERFORMANCE CURVES 1600 1400 1200 1000 800 600 400 200 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 10000 d(off 1000 t d(on) 100 1 10 ...
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... ORDERING INFORMATION Device NTJS3151PT1 NTJS3151PT1G NTJS3151PT2 NTJS3151PT2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package SC−88 SC−88 (Pb−Free) SC−88 SC−88 (Pb−Free) http://onsemi.com 5 † Shipping 3000 Tape & Reel 3000 Tape & ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...