BSD214SN L6327 Infineon Technologies, BSD214SN L6327 Datasheet - Page 6

• Manufacturer Part Number: BSD214SN L6327
• Description: MOSFET N-CH 20V 1.5A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD214SN L6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.2V @ 3.7µA
• Gate Charge (qg) @ Vgs: 0.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 143pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 140 mOhms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 0.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 0.8 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD214SN L6327; BSD214SN L6327INTR; SP000440882