NTJS4160NT1G ON Semiconductor, NTJS4160NT1G Datasheet - Page 4

• Manufacturer Part Number: NTJS4160NT1G
• Description: MOSFET N-CH 30V 1.8A SC88-6
• Manufacturer: ON Semiconductor

Specifications of NTJS4160NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 2.75nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 4.2 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 620 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTJS4160NT1G; NTJS4160NT1GOSTR

350
300
400
250
200
150
100
100
50
10
0
1
0
1
Figure 9. Resistive Switching Time Variation
C
V
I
V
rss
D
DD
GS
= 1.0 A
t
t
d(off)
d(on)
C
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 15 V
= 4.5 V
oss
5
t
t
Figure 7. Capacitance Variation
r
f
R
G
, GATE RESISTANCE (OHMS)
vs. Gate Resistance
C
10
iss
TYPICAL PERFORMANCE CURVES
V
GS
= 0 V
15
10
20
T
25
J
= 25°C
http://onsemi.com
NTJS4160N
100
30
4
5
4
3
2
1
0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
(T
0.4
J
= 25°C unless otherwise noted)
Figure 10. Diode Forward Voltage vs. Current
V
Drain-to-Source Voltage vs. Total Charge
GS
Q
V
V
DS
GS
SD
T
= 0 V
0.5
J
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Q
= 150°C
Figure 8. Gate-to-Source and
G
, TOTAL GATE CHARGE (nC)
1
0.6
QT
Q
T
GD
J
= 125°C
0.7
2
0.8
T
J
= 25°C
I
T
D
V
J
GS
= 2.6 A
= 25°C
T
0.9
J
= -40°C
3
20
15
10
5
0
1.0