NTJS4160NT1G ON Semiconductor, NTJS4160NT1G Datasheet

NTJS4160NT1G

Manufacturer Part Number

NTJS4160NT1G

Description

MOSFET N-CH 30V 1.8A SC88-6

Manufacturer

ON Semiconductor

Datasheet

1.NTJS4160NT1G.pdf (5 pages)

Specifications of NTJS4160NT1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

60 mOhm @ 2.6A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

1.8A

Vgs(th) (max) @ Id

2.4V @ 250µA

Gate Charge (qg) @ Vgs

2.75nC @ 4.5V

Input Capacitance (ciss) @ Vds

230pF @ 10V

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Configuration

Single Quad Drain

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.06 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

4.2 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

2.6 A

Power Dissipation

620 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTJS4160NT1G
NTJS4160NT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTJS4160NT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTJS4160NT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NTJS4160NT1G

Quantity:

200

Company:

H&T Electronics

Part Number:

NTJS4160NT1G

Quantity:

200

Current page: 1 of 5
Download datasheet (82Kb)

NTJS4160N

Power MOSFET

30 V, 3.2 A, Single N-Channel, SC-88

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

2. Surface mounted on FR4 board using the minimum recommended pad size.

March, 2008 - Rev. 1

MAXIMUM RATINGS

Continuous Drain

Current (Note 1)

Continuous Drain

Current (Note 2)

Drain-to-Source Voltage

Gate-to-Source Voltage

Power Dissipation

(Note 1)

Power Dissipation

(Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Environments such as Portable Electronics

Cell Phones, PDAs, Media Players, etc.

Offers an Low R

Low Profile (< 1.1 mm) Allows it to fit Easily into Extremely Thin

Operates at Standard Logic Level Gate Drive

Low Gate Charge

This is a Pb-Free Device

DC-DC Converters (Buck and Boost Circuit)

Optimized for Battery Powered Portable Equipment such as,

Load Management

Battery Charging and OV IC Protection Circuits

[2 oz] including traces).

Parameter

DS(on)

Steady

t ≤ 1 s

State

Solution in the SC-88 Package

= 25°C unless otherwise stated)

= 10 ms

= 25 °C

= 85 °C

= 25 °C

= 85 °C

= 25 °C

Symbol

DSS

STG

-55 to

Value

0.62

0.95

±20

150

260

2.6

1.9

3.2

1.8

1.3

0.3

1.3

Unit

°C

†For information on tape and reel specifications,

NTJS4160NT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SC-88 (SOT 363)

(BR)DSS

30 V

CASE 419B

Device

STYLE 28

(Note: Microdot may be in either location)

ORDERING INFORMATION

http://onsemi.com

65 mW @ 4.5 V

45 mW @ 10 V

= Device Code

= Date Code

= Pb-Free Package

DS(on)

(SOT-363)

(Pb-Free)

Package

Top View

SC-88

MARKING DIAGRAM

TYP

Publication Order Number:

T7 MG

3000 Units/Reel

Shipping

NTJS4160N/D

3.2 A

Max

†

Related parts for NTJS4160NT1G

NTJS4160NT1G Summary of contents

Page 1

... ° - 150 STG I 1 °C 260 T L Device NTJS4160NT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I Max DS(on 3 4.5 V MARKING DIAGRAM Device Code ...

Page 2

THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient - t ≤ (Note 3) Junction-to-Ambient – Steady State (Note 4) 3. Surface mounted on FR4 board using pad size (Cu area = 1.127 ...

Page 3

TYPICAL PERFORMANCE CURVES 4 25° 0.5 1 1 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure ...

Page 4

TYPICAL PERFORMANCE CURVES 400 350 300 250 C iss 200 150 100 C oss 50 C rss DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 ...

Page 5

... L 0.40 0.0157 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center ...

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