BSS670S2L L6327 Infineon Technologies, BSS670S2L L6327 Datasheet

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BSS670S2L L6327

Manufacturer Part Number
BSS670S2L L6327
Description
MOSFET N-CH 55V 540MA SOT-23
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSS670S2L L6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
650 mOhm @ 270mA, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
540mA
Vgs(th) (max) @ Id
2V @ 2.7µA
Gate Charge (qg) @ Vgs
2.26nC @ 10V
Input Capacitance (ciss) @ Vds
75pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.65 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.54 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000247301
• •
OptiMOS
Feature
Type
BSS670S2L
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1) Valid from devices with date code 0604 onwards
A
A
A
A
Rev. 2.3
N-Channel
Avalanche rated
Enhancement mode
Logic Level
=25°C
=70°C
=25°C
=25°C
Buck converter series
1)
j
= 25 °C, unless otherwise specified
Package
PG-SOT 23
D
= 0.54 A, R
G
= 25
Tape and Reel
L6327: 3000 pcs/reel
Page 1
Symbol
I
I
E
V
P
T
D
D puls
j ,
AS
GS
tot
T
stg
Marking
BSs
-55... +150
55/150/56
Product Summary
V
R
I
D
Value
DS
± 20
DS(on)
0.54
0.43
0.36
2.2
8.1
PG-SOT 23
Gate
pin1
BSS670S2L
2006-12-01
0.54
650
55
Unit
A
mJ
V
W
°C
Source
pin 2
Drain
pin 3
V
m
A

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BSS670S2L L6327 Summary of contents

Page 1

OptiMOS Buck converter series Feature • N-Channel • Enhancement mode • • • Logic Level • 1) Avalanche rated • Type Package BSS670S2L PG-SOT 23 Maximum Ratings °C, unless otherwise specified j Parameter Continuous drain current ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage ...

Page 4

Power dissipation tot A BSS670S2L 0.38 W 0.32 0.28 0.24 0.2 0.16 0.12 0.08 0. Safe operating area parameter ...

Page 5

Typ. output characteristic =25° parameter µ 10V 1 0.5 1 1.5 2 2.5 7 Typ. transfer characteristics ...

Page 6

Drain-source on-state resistance DS(on) j parameter : I = 270 mA BSS670S2L 1900 m 1600 1400 1200 1000 800 98% 600 400 typ 200 0 -60 -20 20 ...

Page 7

Typ. gate charge Gate parameter 0.54 A pulsed D BSS670S2L 0,2 DS max 0.4 0.8 1.2 Rev. 2.3 14 Drain-source ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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