BSS83P L6327 Infineon Technologies, BSS83P L6327 Datasheet - Page 4

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BSS83P L6327

Manufacturer Part Number
BSS83P L6327
Description
MOSFET P-CH 60V 0.33A SOT23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSS83P L6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 330mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
330mA
Vgs(th) (max) @ Id
2V @ 80µA
Gate Charge (qg) @ Vgs
3.57nC @ 10V
Input Capacitance (ciss) @ Vds
78pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.33 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSS83PL6327XT
Rev. 1.2
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate to source charge
V
Gate to drain charge
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
DD
DD
DD
DD
A
A
GS
R
R
= 25 °C
= 25 °C
= -30 V, I
= -30 V, I
= -48 V, I
= -48 , I
= -48 V, I
= -48 V , I
= 0 V, I
F
D
F
F =
= -0.33
= I
D
D
= -0.33 A
D
l
S
S
= -0.33 A
= -0.33 A, V
= -0.33 A
, d i
, d i
F
F
/d t = 80 A/µs
/d t = 80 A/µs
GS
= 0 to -10 V
j
= 25 °C, unless otherwise specified
Page 4
Symbol
Q
Q
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
rr
gs
gd
g
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
-2.94
-0.84
typ.
0.12
2.38
typ.
59.4
37.5
1.1
-
-
max.
-0.33
-1.32
max.
0.18
1.65
3.57
-1.1
89
56
2006-12-05
-
BSS 83 P
Unit
nC
V
Unit
A
V
ns
nC

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