BSS84P L6433 Infineon Technologies, BSS84P L6433 Datasheet - Page 4

• Manufacturer Part Number: BSS84P L6433
• Description: MOSFET P-CH 60V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84P L6433

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000247309

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
Rev 2.4
tot
= f ( V
-10
-10
-10
-10
-10
0.38
0.32
0.28
0.24
0.16
0.12
0.08
0.04
= f (T
W
0.2
A
-1
-2
-3
0
1
0
-10
0
BSS 84 P
BSS 84 P
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
120
1
°C
DC
V
T
V
t p = 170.0µs
A
DS
160
1 ms
10 ms
-10
Page 4
2
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T
K/W
-0.18
-0.14
-0.12
-0.08
-0.06
-0.04
-0.02
10
10
10
10
10
-0.1
A
= f (t
-1
0
3
2
1
0
10
0
BSS 84 P
BSS 84 P
A
-5
)
10
p
20
)
single pulse
-4
GS
10
40
-3
p
10 V
10
/T
60
-2
10
80
-1
10
100
0
10
1
2006-12-05
120
BSS 84 P
10
D = 0.50
2
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4