BSS84P L6433 Infineon Technologies, BSS84P L6433 Datasheet - Page 2

• Manufacturer Part Number: BSS84P L6433
• Description: MOSFET P-CH 60V 170MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS84P L6433

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 19pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000247309

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.4
Electrical Characteristics, at
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=-20µA
=-60V, V
=-60V, V
=0, I
=-20V, V
=-4.5V, I
=-10V, I
2
D
cooling area
=-250µA
D
D
GS
GS
DS
=-0.17A
=-0.14A
=0,
=0,
=0
T A
T A
1)
=25°C
=125°C
GS
= V
T A
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
-60
-1
-
-
-
-
-
-
-
-
Values
Values
-0.1
typ.
-1.5
-10
typ.
-10
5.8
8
-
-
-
-
max.
max.
-100
-100
350
300
200
12
2006-12-05
-2
-1
8
-
BSS 84 P
Unit
V
µA
nA
Unit
K/W