FS70SM-2 Renesas Electronics America, FS70SM-2 Datasheet - Page 6

• Manufacturer Part Number: FS70SM-2
• Description: MOSFET N-CH 100V 70A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of FS70SM-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6540pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -

FS70SM-2
Rev.2.00
Aug 07, 2006
100
10
10
10
80
60
40
20
20
16
12
0
2
7
5
3
2
7
5
3
2
7
5
3
2
8
4
0
5
4
3
0
3 5 7
0
Tch = 25°C
f = 1MHz
V
Transfer Characteristics (Typical)
Gate-Source Voltage V
Drain-Source Voltage V
Drain-Source Voltage (Typical)
GS
Tch = 25°C
I
D
10
= 70A
= 0V
Gate-Source Voltage vs.
Gate Charge Qg (nC)
40
4
Gate Charge (Typical)
0
2
Capacitance vs.
V
3 5 7
page 4 of 6
DS
80
8
= 20V
10
1
120
12
2
3 5 7
Tc = 25°C
V
Pulse Test
50V
80V
DS
GS
160
DS
16
Ciss
Coss
Crss
= 10V
10
(V)
(V)
2
2 3
200
20
100
10
10
10
10
10
10
80
60
40
20
0
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
2
1
0
10
3
2
1
10
0
0
Switching Characteristics (Typical)
0
V
Pulse Test
Forward Transfer Admittance vs.
Tc = 125°C
V
Pulse Test
Source-Drain Voltage V
DS
GS
Source-Drain Diode Forward
2 3 4 5 7
2 3 4 5 7
= 10V
0.4
Characteristics (Typical)
= 0V
Drain Current (Typical)
Drain Current I
Drain Current I
0.8
t
t
10
10
125°C
f
r
75°C
Tch = 25°C
V
V
R GEN = R GS = 50Ω
1
1
75°C
25°C
T
t
t
d(off)
d(on)
DD
GS
1.2
C
= 25°C
= 50V
= 10V
2 3 4 5 7
2 3 4 5 7
D
D
(A)
(A)
1.6
SD
(V)
10
10
2.0
2
2