FS70SM-2 Renesas Electronics America, FS70SM-2 Datasheet - Page 5

• Manufacturer Part Number: FS70SM-2
• Description: MOSFET N-CH 100V 70A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of FS70SM-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6540pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -

FS70SM-2
Performance Curves
Rev.2.00
Aug 07, 2006
200
160
120
100
2.0
1.6
1.2
0.8
0.4
80
40
80
60
40
20
0
0
0
0
0
0
Power Dissipation Derating Curve
Tc = 25°C
Pulse Test
Output Characteristics (Typical)
Drain-Source Voltage V
Gate-Source Voltage V
Gate-Source Voltage (Typical)
Case Temperature Tc (°C)
0.4
4
On-State Voltage vs.
50
V
GS
page 3 of 6
= 20V 10V 8V
0.8
8
100
1.2
12
P
Tc = 25°C
Pulse Test
D
150
P
= 35W
GS
1.6
DS
D
16
= 150W
100A
(V)
(V)
70A
30A
6V
5V
200
2.0
20
10
10
10
50
40
30
20
10
20
16
12
3
2
7
5
3
2
7
5
3
2
7
5
3
0
8
4
0
2
1
0
3 5 7
0
3 5 7
Tc = 25°C
Pulse Test
Drain-Source Voltage V
Output Characteristics (Typical)
Drain-Source Voltage V
Tc = 25°C
Pulse Test
Tc = 25°C
Single Pulse
Maximum Safe Operating Area
10
10
0.2
On-State Resistance vs.
Drain Current (Typical)
0
0
Drain Current I
V
2
2
GS
3 5 7
3 5 7
= 20V
0.4
10
10
10V
1
1
0.6
2
8V 6V
2
3 5 7
3 5 7
D
V
(A)
GS
0.8
DS
DS
tw = 10µs
10
10
= 10V
100µs
1ms
DC
20V
2
(V)
(V)
2
5V
4V
2 3
2 3
1.0