2SK3845(Q) Toshiba, 2SK3845(Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK3845(Q)
• Description: MOSFET N-CH 60V 70A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3845(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 196nC @ 10V
• Input Capacitance (ciss) @ Vds: 12400pF @ 10V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 70A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0058 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 70 A
• Power Dissipation: 125 W
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
120
150
10
100
90
60
30
2
0
4
8
6
−80
0
0.1
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
−40
Drain−source voltage V
Case temperature Tc (°C)
Case temperature Tc (°C)
40
Capacitance – V
0
1
R
DS (ON)
P
D
80
40
− Tc
− Tc
80
10
DS
I D = 70 A
DS
120
18
120
(V)
C oss
C iss
C rss
35
100
160
160
4
1000
100
50
40
30
10
20
10
5
4
3
2
−80
1
1
0
0
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Dynamic input/output characteristics
−40
V DS
0.2
Drain−source voltage V
Case temperature Tc (°C)
80
V GS
Total gate charge Q
0.4
0
I
V
DR
th
V DD = 12 V
160
1
40
0.6
− Tc
48V
− V
10
DS
80
0.8
5
Common source
Tc = 25°C
Pulse test
Common source
I D = 70 A
Tc = 25°C
Pulse test
V GS = 0 V
DS
240
g
24V
120
(nC)
1.0
3
(V)
2006-11-17
2SK3845
160
1.2
320
25
20
15
10
5
0