2SK3845(Q) Toshiba, 2SK3845(Q) Datasheet - Page 2
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2SK3845(Q)
Manufacturer Part Number
2SK3845(Q)
Description
MOSFET N-CH 60V 70A SC-67
Manufacturer
Toshiba
Datasheet
1.2SK3845Q.pdf
(6 pages)
Specifications of 2SK3845(Q)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.8 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
196nC @ 10V
Input Capacitance (ciss) @ Vds
12400pF @ 10V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Transistor Polarity
N Channel
Continuous Drain Current Id
70A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5.8mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0058 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
125 W
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3845(Q)
Manufacturer:
MOTOROLA
Quantity:
14 000
Electrical Characteristics (Ta = 25°C)
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
TOSHIBA
K3845
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Note 1)
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
Q
t
t
on
off
oss
t
t
rss
iss
gd
th
gs
fs
r
f
g
Symbol
V
⎪
I
DRP
I
Q
DR
DSF
t
rr
rr
Duty < = 1%, t
V
V
I
I
V
V
V
V
V
V
D
D
GS
DS
DS
GS
DS
DS
GS
DD
= 10mA, V
= 10mA, V
10 V
0 V
I
I
dI
DR
DR
= ±16 V, V
= 60V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 48 V, V
DR
2
(Ta = 25°C)
= 70 A, V
= 70 A, V
/dt = 50 A/µs
w
Test Condition
GS
GS
D
D
D
= 10 µs
GS
GS
Test Condition
GS
= 1 mA
= 35 A
DS
= 35 A
= 0 V
= −20 V
GS
GS
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
I
⎯
⎯
= 0 V
D
= 0 V,
= 35 A
V
DD
D
R
≒30 V
= 70 A
L
= 0.86 Ω
V
OUT
Min
Min
2.0
60
35
44
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
12400
1100
Typ.
Typ.
700
200
196
148
4.7
88
17
44
35
48
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
70
77
2006-11-17
2SK3845
Max
Max
−1.5
±10
100
280
4.0
5.8
70
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
nC
ns
ns
V
V
S
A
A
V