2SK3403(Q) Toshiba, 2SK3403(Q) Datasheet - Page 5

• Manufacturer Part Number: 2SK3403(Q)
• Description: MOSFET N-CH 450V 13A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3403(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: 2-10S1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 100 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.05
0.03
100
0.5
0.3
0.1
50
30
10
5
3
1
I D max
(continuous)
I D max (pulse) *
3
* Single nonrepetitive pulse
Curves must be derated linearly
with increase in temperature.
Tc = 25°C
Drain-source voltage V
10
0.05
0.03
0.01
0.5
0.3
0.1
Safe operating area
10 μ
3
1
DC operation
Tc = 25°C
0.05
0.02
0.01
0.2
0.1
Duty = 0.5
30
100 μ
100
DS
1 ms *
V DSS max
Single pulse
(V)
300
100 μs *
1 m
1000
Pulse width t
r
th
10 m
– t
5
w
R
V
w
DD
G
(s)
= 25 Ω
= 90 V, L = 3.46 mH
400
300
200
100
−15 V
100 m
0
25
15 V
Test circuit
Channel temperature (initial) Tch (°C)
P DM
50
Duty = t/T
R th (ch-c) = 1.25°C/W
1
t
T
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
10
2
1
Waveform
VDSS
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
V
DS
2010-04-13
B VDSS
2SK3403
150
−
V DD
⎞
⎟
⎟
⎠