2SK3403(Q) Toshiba, 2SK3403(Q) Datasheet - Page 2

• Manufacturer Part Number: 2SK3403(Q)
• Description: MOSFET N-CH 450V 13A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3403(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: 2-10S1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 100 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3403
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Tc = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Note 4: A line under a Lot No. identifies the indication of product
V
I
V
I
V
V
V
V
V
Duty
G
D
V
GS
DS
DS
GS
DS
DS
DD
GS
= ±10 μA, V
= 10 mA, V
10 V
I
I
dI
0 V
DR
DR
= 450 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ±25 V, V
= 10 V, I
≈ 360 V, V
≤
DR
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
1%, t
2
= 13 A, V
= 13 A, V
(Ta = 25°C)
/dt = 100 A/μs
w
Test Condition
D
D
D
GS
GS
= 10 μs
DS
Test Condition
GS
= 1 mA
= 6 A
DS
= 6 A
GS
= 0 V
GS
GS
= 0 V, f = 1 MHz
I
= 0 V
D
= 0 V
= 0 V
= 10 V, I
= 6 A
⎯
⎯
= 0 V
= 0 V,
V
DD
D
R
≈ 200 V
= 13 A
L
33.3 Ω
=
Output
450
Min
±30
Min
3.0
3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1600
Typ.
0.29
Typ.
220
300
5.8
3.4
17
28
45
10
56
34
19
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2010-04-13
2SK3403
−1.7
Max
Max
±10
100
5.0
0.4
⎯
⎯
⎯
⎯
⎯
13
52
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V