2SK3700(F) Toshiba, 2SK3700(F) Datasheet - Page 3
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2SK3700(F)
Manufacturer Part Number
2SK3700(F)
Description
MOSFET N-CH 900V 5A SC-67
Manufacturer
Toshiba
Datasheet
1.2SK3700F.pdf
(6 pages)
Specifications of 2SK3700(F)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1150pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
0.1
10
10
5
4
3
2
1
0
8
6
4
2
0
1
0.1
0
0
Common source
Common source
Tc = 25°C
Pulse Test
Common source
V DS = 10 V
Pulse Test
V DS = 10 V
Pulse Test
4
2
Drain-source voltage V DS
Gate-source voltage V GS
Drain current I D (A)
100
8
10
4
⎪Y
I
8
I
D
D
Tc = −55°C
fs
– V
– V
12
⎪ – I
1
DS
GS
D
100
6
25
Tc = −55°C
16
6
V GS = 4.5 V
(V)
(V)
25
8
20
5.5
5.25
4.75
5
24
10
10
3
20
14
12
10
0.01
6
5
4
3
2
1
0
8
4
0
5
3
1
0
0
Common source
Tc = 25°C
Pulse Test
Drain-source voltage V DS
Gate-source voltage V GS
4
Drain current I D (A)
10
0.1
R
V GS = 10 V、15V
V
DS (ON)
8
I
DS
D
10
– V
– V
DS
6
GS
– I
12
I D = 5 A
D
20
Common source
Tc = 25°C
Pulse Test
1
8
Common source
Tc = 25°C
V GS = 10 V
Pulse Test
V GS = 4 .5V
(V)
(V)
3
16
1.5
5.5
5.25
4.75
2009-09-29
5
2SK3700
30
20
10