2SK3903(F) Toshiba, 2SK3903(F) Datasheet - Page 4

• Manufacturer Part Number: 2SK3903(F)
• Description: MOSFET N-CH 600V 14A SC-65
• Manufacturer: Toshiba

Specifications of 2SK3903(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 440 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 62nC @ 10V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

200
160
120
1.2
0.8
0.6
0.4
0.2
80
40
1
0
10000
0
-80
1000
0
100
10
0.1
COMMON SOURCE
V GS = 10 V
PULSE TEST
COMMON SOURCE
V GS = 0 V
f = 1 MHz
Tc = 25°C
DRAIN−SOURCE VOLTAGE V
-40
CASE TEMPERATURE
CASE TEMPERATURE
40
0
CAPACITANCE – V
R
80
DS (ON)
1
P
I D = 14 A
D
40
− Tc
− Tc
120
80
3.5
Tc (°C)
Tc (°C)
10
DS
DS
160
120
7
(V)
C iss
160
C oss
C rss
200
100
4
100
0.1
10
500
400
300
200
100
5
4
3
2
1
0
1
0.0
-80
0
0
COMMON SOURCE
Tc = 25°C
PULSE TEST
DRAIN−SOURCE VOLTAGE V
10
-0.2
-40
TOTAL GATE CHARGE Q
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
20
V DS
5
CHARACTERISTICS
-0.4
V GS
3
0
V DS = 100 V
1
I
40
DR
V
th
-0.6
− V
40
− Tc
V GS = 0, −1 V
DS
400
60
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
COMMON SOURCE
I D = 14 A
Tc = 25°C
PULSE TEST
-0.8
80
g
200
DS
(nC)
-1.0
80
120
(V)
2009-09-29
2SK3903
-1.2
100
160
20
16
12
8
4
0