2sk3903 TOSHIBA Semiconductor CORPORATION, 2sk3903 Datasheet

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2sk3903

Manufacturer Part Number
2sk3903
Description
Silicon N-channel Mos Type Switching Regulator Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: ⎪Y
Low leakage current: I
Enhancement model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: V
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
DD
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
Characteristic
= 90 V, T
GS
DC
Pulse
= 20 kΩ)
ch
DSS
th
= 25°C, L = 7.2 mH, R
(Note 2)
= 2.0~4.0 V (V
(Note 1)
(Note 1)
= 100 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
DGR
GSS
P
DSS
I
DP
AR
⎪ = 7.5 S (typ.)
AS
AR
stg
D
ch
R
R
DS
D
2SK3903
Symbol
th (ch-a)
th (ch-c)
= 0.32 Ω (typ.)
= 10 V, I
DS
G
= 25 Ω, I
= 600 V)
−55~150
Rating
D
600
600
±30
150
806
150
14
56
14
15
1
= 1 mA)
0.833
Max
50
AR
= 14 A
Unit
mJ
mJ
°C/W
°C/W
°C
°C
W
V
V
V
A
A
Unit
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
1
2−16C1B
SC-65
2006-11-08
2SK3903
Unit: mm
2
3

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2sk3903 Summary of contents

Page 1

... D E 806 150 °C ch −55~150 T °C stg Symbol Max Unit R 0.833 °C/W th (ch- °C/W th (ch- Ω 2SK3903 Unit GATE 2. DRAIN (HEATSINK) 3. SOURCE JEDEC ― JEITA SC-65 TOSHIBA 2−16C1B Weight: 4.6 g (typ 2006-11-08 ...

Page 2

... Test Condition ⎯ ⎯ I DRP = DSF /dt = 100 A/μ 2SK3903 Min Typ. Max ⎯ ⎯ ±10 ±30 ⎯ ⎯ ⎯ ⎯ 100 ⎯ ⎯ 600 ⎯ 2.0 4.0 ⎯ 0.32 0.44 ⎯ 2.1 7.5 ⎯ ⎯ ...

Page 3

... DRAIN−SOURCE VOLTAGE (V) GATE−SOURCE VOLTAGE V 1 COMMON SOURCE Tc = 25°C PULSE TEST 0.1 1 100 3 2SK3903 I – COMMON SOURCE 8 25°C 6.75 PULSE TEST 6.5 6.25 6.0 5. – COMMON SOURCE Tc = 25°C ...

Page 4

... C iss oss rss 0 100 -80 -40 (V) CASE TEMPERATURE Tc (°C) 500 400 300 200 100 0 200 0 TOTAL GATE CHARGE Q 4 2SK3903 − −1 V -0.4 -0.6 -0.8 -1.0 -1.2 (V) DS − COMMON SOURCE PULSE TEST 0 40 ...

Page 5

... CHANNEL TEMPERATURE (INITIAL) Tch (°C) 1000 ( −15 V TEST CIRCUIT = 25 Ω 7 2SK3903 t T Duty = t (ch-c) = 0.833°C – 100 125 150 B VDSS WAVE FORM ⎛ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3903 20070701-EN 2006-11-08 ...

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