TPC8117(TE12L,Q) Toshiba

TPC8117(TE12L,Q)

Manufacturer Part Number

TPC8117(TE12L,Q)

Description

MOSFET P-CH 30V 18A SOP8 2-6J1B

Manufacturer

Toshiba

Specifications of TPC8117(TE12L,Q)

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.9 mOhm @ 9A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

4600pF @ 10V

Power - Max

Mounting Type

Surface Mount

Package / Case

2-6J1B

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.0039 Ohms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

18 A

Power Dissipation

1.9 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TPC8117(TE12L,Q)

Manufacturer:

Quantity:

1 904

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