TPC8117 TOSHIBA Semiconductor CORPORATION, TPC8117 Datasheet

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TPC8117

Manufacturer Part Number
TPC8117
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Lithium Ion Battery Applications
Notebook PC Applications
Absolute Maximum Ratings
Small footprint due to small and thin package
Low drain-source ON-resistance
High forward transfer admittance
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (t = 10 s)
Drain power dissipation (t = 10 s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note 1, Note 2, Note 3 and Note 4: See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
(Note 2a) (Note 4)
GS
DC
Pulse (Note 1)
= 20 kΩ)
DSS
th
(Note 2a)
(Note 2b)
= −0.8 to −2.0 V (V
(Note 1)
(Note 3)
= −10 μA (max) (V
(Ta = 25°C)
Symbol
: R
: |Y
V
V
V
E
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
D
D
TPC8117
DS (ON)
fs
| = 54 S (typ.)
DS
DS
= −10 V, I
= 3.0 mΩ (typ.)
= −30 V)
−55 to 150
Rating
0.030
−30
−30
±20
−18
−72
211
−18
150
1.9
1.0
1
D
= −1 mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
2-6J1B
6
3
2008-06-24
TPC8117
5
4
Unit: mm

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TPC8117 Summary of contents

Page 1

... V V GSS I − − 211 − 0.030 150 ° −55 to 150 °C stg 1 TPC8117 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 2008-06-24 ...

Page 2

... Year of manufacture (The last digit of a year) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPC8117 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) = −18 A 2008-06-24 ...

Page 3

... − gs1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = − DSF TPC8117 Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ − −30 ⎯ ⎯ −13 ⎯ ⎯ −0.8 ⎯ −2.0 ⎯ ...

Page 4

... Gate−source voltage V 100 Common source Ta = 25°C Pulse test 10 1 0.1 −100 −0.1 4 TPC8117 I – −3 −2.8 −3.2 Common source − 25°C −6 Pulse test − 2.6 −2 −2.2 V −1 −2 −3 − ...

Page 5

... − −1 mA Pulse test 0 −100 −80 −40 (V) Ambient temperature Ta ( − −24V − −12 −10 −6 0 160 200 0 C) ° 5 TPC8117 I – −3 −5 − Common source Ta = 25°C Pulse test 0.4 0.6 0.8 1 1.2 ( – ...

Page 6

... Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max −0.1 −0.1 −1 −10 Drain−source voltage V DS − 0 Pulse width t (s) w −100 (V) 6 TPC8117 (2) (1) Single pulse 100 1000 2008-06-24 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8117 20070701-EN GENERAL 2008-06-24 ...

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