TPC8115(TE12L,Q,M) Toshiba, TPC8115(TE12L,Q,M) Datasheet - Page 4

• Manufacturer Part Number: TPC8115(TE12L,Q,M)
• Description: MOSFET P-CH 20V 10A SOP8 2-6J1B
• Manufacturer: Toshiba

Specifications of TPC8115(TE12L,Q,M)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 115nC @ 5V
• Input Capacitance (ciss) @ Vds: 9130pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 2-6J1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
−10
−40
−30
−20
−10
100
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
0
−2
−2.5
100
−0.2
−0.2
25
−1.8
−3
−1
Drain-source voltage V
−4
Gate-source voltage V
−10
Ta = −55°C
Drain current I
−1
−0.4
−0.4
Ta = −55°C
−2
I
I
|Y
D
D
−1.65
fs
– V
– V
| – I
DS
GS
−0.6
−0.6
D
−3
D
−10
100
GS
DS
(A)
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −1.5 V
−0.8
−0.8
(V)
(V)
−4
−1.55
−1.6
25
−100
−1
−5
4
−0.5
−0.4
−0.3
−0.2
−0.1
−40
−30
−20
−10
100
10
−0.1
0
0
1
0
0
−2
−10
−4.5
−3
−1
−2
Drain-source voltage V
Gate-source voltage V
V GS = −1.8 V
Drain current I
−1
R
−2
V
−4
DS (ON)
I
DS
D
I D = −10 A
– V
– V
−2.5
DS
GS
– I
−3
−6
D
D
−10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = −1.5 V
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
−1.8
(V)
(V)
−1.65
−4
−8
−1.55
−2.5
2006-11-15
−5.0
TPC8115
−2.5
−4.5
−1.6
−100
−10
−5