2SJ681(Q) Toshiba, 2SJ681(Q) Datasheet - Page 5

• Manufacturer Part Number: 2SJ681(Q)
• Description: MOSFET P-CH 60V 5A PW-MOLD
• Manufacturer: Toshiba

Specifications of 2SJ681(Q)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 10V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: 2-7J2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

−100
−0.1
−10
−1
−0.1
I D max (pulsed) *
I D max (continuous)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
Tc = 25°C
Drain-source voltage V
Safe Operating Area
DC operation
0.01
0.1
Tc = 25°C
10
−1
10 μ
1
Duty = 0.5
0.1
0.2
1 ms *
0.01
100 μ
−10
0.02
DS
V DSS max
0.05
(V)
100 μs *
1 m
−100
Pulse width t
Single pulse
r
th
10 m
5
− t
R
V
DD
G
w
= 25 Ω
w
= −25 V, L = 2.2 mH
−15 V
(s)
50
40
30
20
10
0 V
0
25
100 m
Test circuit
P DM
Channel temperature (initial) Tch (°C)
50
Duty = t/T
R th (ch-c) = 6.25°C/W
t
T
1
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
1
2
Waveform
VDSS
I
⋅
AR
L
10
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
V
DS
B VDSS
2010-03-01
150
2SJ681
−
V DD
⎞
⎟
⎟
⎠