2SJ681(Q) Toshiba, 2SJ681(Q) Datasheet - Page 2

• Manufacturer Part Number: 2SJ681(Q)
• Description: MOSFET P-CH 60V 5A PW-MOLD
• Manufacturer: Toshiba

Specifications of 2SJ681(Q)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 10V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: 2-7J2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
J681
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Note 1)
V
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
Qrr
V
t
t
Q
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
I
I
dl
D
D
DR
DR
GS
DS
DS
GS
GS
DS
DS
DD
DR
= −10 mA, V
= −10 mA, V
Duty ≤ 1%, t
Note 4: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
V
= −5 A, V
= −5 A, V
= −60 V, V
= −10 V, I
= −10 V, I
= −10 V, V
≈ −48 V, V
= ±16 V, V
= −4 V, I
= −10 V, I
/ dt = 50 A / μs
GS
−10 V
0 V
2
Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
(Ta = 25°C)
GS
GS
D
D
D
D
Test Condition
Test Condition
GS
GS
DS
GS
= −2.5 A
GS
w
GS
= −1 mA
= −2.5 A
= −2.5 A
= 0 V
= 0 V
= 10 μs
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V, I
I
—
—
D
= −2.5 A
V
DD
D
= −5 A
R
≈ −30 V
L
12 Ω
=
Output
−0.8
−60
−35
Min
Min
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
0.16
0.12
Typ.
700
5.0
—
—
—
—
—
60
90
14
24
14
95
15
11
40
32
—
—
—
4
2010-03-01
−100
−2.0
0.25
0.17
Max
Max
±10
−20
1.7
−5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2SJ681
Unit
Unit
μA
μA
nC
nC
pF
ns
ns
V
V
V
Ω
S
A
A
V