TPCP8101(TE85L,F,M Toshiba, TPCP8101(TE85L,F,M Datasheet - Page 3

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TPCP8101(TE85L,F,M

Manufacturer Part Number
TPCP8101(TE85L,F,M
Description
MOSFET P-CH 20V 5.6A 2-3V1K
Manufacturer
Toshiba
Datasheet

Specifications of TPCP8101(TE85L,F,M

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
19nC @ 5V
Input Capacitance (ciss) @ Vds
1550pF @ 10V
Power - Max
840mW
Mounting Type
Surface Mount
Package / Case
2-3V1K
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristic
Characteristic
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
Symbol
V
I
DRP
DSF
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
I
I
C
|Y
C
C
Q
GSS
Q
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
I
th
fs
r
f
g
DR
|
= -5.6  A , V
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
V
D
D
D
GS
DS
DS
GS
GS
GS
DS
DS
DD
GS
= -10 mA, V
= -10 mA, V
= -5.6 A
3
(Ta = 25°C)
-5 V
= -20 V, V
= -10 V, I
= -10 V, I
= -10 V, V
= ±8 V, V
= -1.8 V, I
= -2.5 V, I
= -4.5 V, I
∼ − -16 V, V
0 V
Test Condition
GS
= 0 V
Test Condition
w
D
D
DS
= 10 µs
GS
GS
GS
D
D
D
GS
GS
= -200 µA
= -2.8 A
= -1.4 A
= -2.8 A
= -2.8 A
= 0 V
= 0 V
= 8 V
V
= 0 V
= 0 V, f = 1 MHz
= -5 V,
I
D
DD
= -2.8 A
∼ − -10 V
V
OUT
Min
Min
-0.5
-20
-12
7
1550
Typ.
Typ.
215
265
67
36
24
14
13
21
68
19
14
7
5
TPCP8101
2006-11-17
-22.4
Max
Max
-1.2
±10
-10
1.2
90
41
30
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V

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